Laser Spectroscopy and Quantum Optics in GaAs and InAs Semiconductor Quantum Dots

被引:0
|
作者
Steel, Duncan G. [1 ,2 ]
机构
[1] Univ Michigan, Dept EECS, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
关键词
SPONTANEOUS EMISSION; ENTANGLEMENT; EXCITATION; EXCITONS; STATE; SPIN; FIELD;
D O I
10.1016/bs.aamop.2015.07.001
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
This chapter reviews primarily the evolution of the understanding of coherent optical interactions and spectroscopy in semiconductor quantum dots. The work begins by a brief review of the dominance of complex many-body interactions in higher dimensional materials and then proceeds to examine the behavior in quantum dots. The work reviews the knowledge extracted using frequency domain spectroscopy techniques, which has provided considerable insight into the physics of these systems. The results show that quantum confinement suppresses the kind of many-body physics seen in bulk material and allows the optical interaction to be well described by two or few state energy-level diagrams and the master equations using the density matrix. Numerous examples of classical atomic behavior are reviewed including Rabi oscillations, coherent population trapping, and the Mollow absorption spectrum. The chapter also discusses how these structures can be used as a platform for possible applications to quantum information sciences. Finally, the chapter concludes by examining the role of the hyperfine interaction. Unlike atomic systems with one nucleus, quantum dot excitons involve of order 104 nuclei. The hyperfine interaction is the origin of decoherence of the spin doublet ground state in a negatively charged quantum dot. However, the optical studies have shown an unexpected coupling between the exciton and the nuclei that leads to freezing of the nuclear fluctuations.
引用
收藏
页码:181 / 222
页数:42
相关论文
共 50 条
  • [21] A nonlinear iterative method for InAs/GaAs semiconductor quantum dots simulation
    Li, YM
    Voskoboynikov, O
    Lee, CP
    Sze, SM
    SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001, 2001, : 324 - 327
  • [22] Comparison of quantum nature in InAs/GaAs quantum dots
    Jang, YD
    Lee, UH
    Lee, H
    Lee, D
    Kim, JS
    Leem, JY
    Noh, SK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S111 - S113
  • [23] Rough InAs/GaAs quantum dots
    Bezerra, M. G.
    Farlas, G. A.
    Freire, J. A. K.
    Ferreira, R.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 899 - +
  • [24] Dephasing in InAs/GaAs quantum dots
    Borri, P
    Langbein, W
    Mork, J
    Hvam, JM
    Heinrichsdorff, F
    Mao, MH
    Bimberg, D
    PHYSICAL REVIEW B, 1999, 60 (11): : 7784 - 7787
  • [25] Photocurrent in self-organized InAs quantum dots in 1.3 μm InAs/InGaAs/GaAs semiconductor laser heterostructures
    Savel'evl, AV
    Maksimov, MV
    Ustinov, VM
    Seisyan, RP
    SEMICONDUCTORS, 2006, 40 (01) : 84 - 88
  • [26] Photocurrent in self-organized InAs quantum dots in 1.3 μm InAs/InGaAs/GaAs semiconductor laser heterostructures
    A. V. Savel’ev
    M. V. Maksimov
    V. M. Ustinov
    R. P. Seĭsyan
    Semiconductors, 2006, 40 : 84 - 88
  • [27] Electronic states of InAs/GaAs quantum dots by scanning tunneling spectroscopy
    Gaan, S.
    He, Guowei
    Feenstra, R. M.
    Walker, J.
    Towe, E.
    APPLIED PHYSICS LETTERS, 2010, 97 (12)
  • [28] Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
    Fry, PW
    Itskevich, IE
    Parnell, SR
    Finley, JJ
    Wilson, LR
    Schumacher, KL
    Mowbray, DJ
    Skolnick, MS
    Al-Khafaji, M
    Cullis, AG
    Hopkinson, M
    Clark, JC
    Hill, G
    PHYSICAL REVIEW B, 2000, 62 (24) : 16784 - 16791
  • [29] Photoreflectance spectroscopy of InAs/GaAs quantum dots by using a bright configuration
    Kim, Geun-Hyeong
    Lee, Sang Jo
    Kim, Jong Su
    Bae, In-Ho
    Kim, Ki-Hong
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 62 (03) : 513 - 517
  • [30] Photocurrent Spectroscopy of InAs/GaAs Quantum Dots Grown by Using MBE
    Jo, Hyun-Jun
    Bae, In-Ho
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 60 (05) : 787 - 790