Hydrogen-Bond-Induced High Performance Semitransparent Ternary Organic Solar Cells with 14% Efficiency and Enhanced Stability

被引:24
|
作者
Lu, Xi [1 ]
Cao, Luye [1 ]
Du, Xiaoyang [1 ]
Lin, Hui [1 ]
Zheng, Caijun [1 ]
Chen, Zhenhua [2 ]
Sun, Bo [2 ]
Tao, Silu [1 ]
机构
[1] Univ Elect Sci & Technol China UESTC, Sch Optoelect Sci & Engn, Chengdu 610054, Peoples R China
[2] Chinese Acad Sci, Shanghai Adv Res Inst, Shanghai Synchrotron Radiat Facil SSRF, Shanghai 201204, Peoples R China
来源
ADVANCED OPTICAL MATERIALS | 2021年 / 9卷 / 12期
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
device stability; film thickness tolerance; hydrogen‐ bond strategy; semitransparent organic solar cells; ternary strategy;
D O I
10.1002/adom.202100064
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Semitransparent organic solar cells (ST-OSCs) have huge potential in terms of building integrated photovoltaics (BIPVs). However, the inherent contradiction between active layer absorption and average visible-light transmittance (AVT) hinders the follow-up development of ST-OSC. To solve this problem, hydrogen bond strategy has been adopted to simultaneously improve the photon trapping capability and film thickness tolerance of the devices. Here, an organic small molecule material DIBC is introduced into PM6:Y6 system to form an intramolecular hydrogen bond with Y6, through which a high power conversion efficiency (PCE) of 17.20% is obtained. It is noted that when the active layer thickness is varied from 70 to 150 nm, the PCE values distributed in the range of 16.39-17.20%, which exhibits excellent film thickness tolerance. Moreover, ST-OSCs are achieved with a maximum PCE of 14% and a high AVT of 21.60%, which is among the best reported results of ST-OSCs. In addition, hydrogen-bond-based ST-OSCs show superior thermal and light stability in the atmospheric environment corresponding to the control devices. This work provides a feasible solution for ST-OSC with outstanding efficiency and high AVT, which is of great significance for the industrial production of BIPVs in the future.
引用
收藏
页数:9
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