Magneto-quantum transport in AlxGa1-xAsySb1-y/InAs quantum wells

被引：0

作者：

Ishida, S. ^{[1
]}

Fujimoto, A. ^{[2
]}

Tamiya, S. ^{[3
]}

Oto, K. ^{[3
]}

Okamoto, A. ^{[4
]}

Shibasaki, I. ^{[4
]}

机构：

[1] Tokyo Univ Sci, Yamaguchi 7560884, Japan

[2] Osaka Inst Tech, Nanomat Microdevices Res Ctr, Osaka 5358585, Japan

[3] Chiba Univ, Fac Sci, Dept Phys, Chiba 2638522, Japan

[4] Asahi Kasei Corp, Shizuoka 4168501, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 2 | 2007年 / 4卷 / 02期

关键词：

D O I：

10.1002/pssc.200673284

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Magneto-quantum (t)ransport properties in AlxGa1-xAsySb1-y/InAs deep quantum wells (QWs) with different well width (L-w = 15 and 50 nm) have been studied both in low and high magnetic fields. The low-field magnetoconductance has been explained in the light of the two-dimensional weak- localization theory taking account of the effect of Zeeman splitting on spin-orbit scattering of electrons. Analysis of Quantum Hall effect (QHE) in high-field region for L-w = 50 nm indicates the existence of a small number of holes only partially participating with the QHE, suggesting that our QW is a type-II hetero-structure.

引用

页码：325 / +

页数：3

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