INFLUENCE OF GAMMA RAY ONTO TRANSPARENT INDIUM TIN OXIDE THIN FILMS

Transparent Conducting Indium Tin Oxide (ITO) thin films were deposited with Pulsed Laser Deposition PLD at 300 degrees C. The ITO films have small grain size of 22-26 nm, an average surface roughness of 5.5 nm and a high value transmission (95%) in the wavelength range from 300 to 700 nm with a low resistivity of 2.25 x 10(-4) Omega.cm. Spectral, structural and morphological properties were investigated for the films irradiated at low doses (5-25kGy). Improvement to the crystallinity was observed for the (ITO) films annealed at 300 degrees C and above with a slight decrease in the optical transmittance. Annealing greatly decreased the resistivity of the films. A lower resistivity and better spectra selectivity is a measurement of the quality and potential use of transparent ITO films for the application as anode electrodes for optoelectronic devices such as solar cells and organic light-emitting diodes.