INFLUENCE OF GAMMA RAY ONTO TRANSPARENT INDIUM TIN OXIDE THIN FILMS

被引：0
|
作者：
Mustapha, N. [1 ]
Alkaoud, A. [1 ]
Alyamani, A. [3 ]
Idriss, H. [2 ,4 ]
机构：
[1] Al Imam Mohammad Ibn Saud Islamic Univ, Coll Sci, Dept Phys, POB 90950, Riyadh 11623, Saudi Arabia
[2] King Abdul Aziz City Sci & Technol KACST, Natl Nanotechnol Ctr, Riyadh, Saudi Arabia
[3] Al Imam Mohammad Ibn Saud Islamic Univ, Coll Sci, Comm Radiat & Environm Pollut Protect, Riyadh, Saudi Arabia
[4] Sudan Atom Energy Commiss, POB 3001, Al Khurtum, Sudan
来源：
JOURNAL OF OVONIC RESEARCH | 2018年 / 14卷 / 03期
关键词：
Thin films; Gamma irradiation; Atomic force microscopy; Optical coatings; Pulsed laser deposition; PULSED-LASER DEPOSITION; OPTICAL-PROPERTIES; ROOM-TEMPERATURE; MEH-PPV; CRYSTALLIZATION; EFFICIENCY;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transparent Conducting Indium Tin Oxide (ITO) thin films were deposited with Pulsed Laser Deposition PLD at 300 degrees C. The ITO films have small grain size of 22-26 nm, an average surface roughness of 5.5 nm and a high value transmission (95%) in the wavelength range from 300 to 700 nm with a low resistivity of 2.25 x 10(-4) Omega.cm. Spectral, structural and morphological properties were investigated for the films irradiated at low doses (5-25kGy). Improvement to the crystallinity was observed for the (ITO) films annealed at 300 degrees C and above with a slight decrease in the optical transmittance. Annealing greatly decreased the resistivity of the films. A lower resistivity and better spectra selectivity is a measurement of the quality and potential use of transparent ITO films for the application as anode electrodes for optoelectronic devices such as solar cells and organic light-emitting diodes.
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页码：225 / 233
页数：9
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