Characteristics of Sputtered Lead Zirconate Titanate Thin Films With Different Layer Configurations and Large Thickness

被引:3
|
作者
Kanda, Kensuke [1 ]
Koyama, Tsukasa [2 ]
Yoshimura, Takeshi [3 ]
Murakami, Shinichi [2 ]
Maenaka, Kazusuke [1 ]
机构
[1] Univ Hyogo, Grad Sch Engn, Himeji, Hyogo 6712280, Japan
[2] Toray Res Ctr Co Ltd, Otsu, Shiga 5208567, Japan
[3] Osaka Prefecture Univ, Grad Sch Engn, Sakai, Osaka 5998531, Japan
基金
日本科学技术振兴机构; 日本学术振兴会;
关键词
Films; Sputtering; Electrodes; Dielectrics; Permittivity; Electric fields; Nonhomogeneous media; Ferroelectric thin films; large thickness; microelectromechanical systems (MEMS); sputter deposition; Pb(Zr; Ti)O-3; (PZT); PB(ZR; TI)O-3; FILMS; MICROSTRUCTURAL EVOLUTION; PIEZOELECTRIC PROPERTIES;
D O I
10.1109/TUFFC.2020.3039230
中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
To evaluate the characteristics of Pb(Zr,Ti)O-3 (PZT) thin films (about 10 mu m thick) with three different sputtering configurations-single-layer (SL) deposition, multilayer (ML) deposition with internal electrodes, and multistep (MS) deposition-were prepared. The SL films exhibited poorer dielectric characteristics than the ML and MS films. The reliability and piezoelectric characteristics were especially high in the MS film, with an e(31,f) constant of -9.5 C . m(-2). To investigate the porosity of the films, reconstructed 3-D SEM technique is employed. Reconstructed 3-D SEM images revealed decreased void densities in the ML and MS films, which improved their performance. The MS configuration provided the best dielectric and piezoelectric performance of PZT films.
引用
收藏
页码:1988 / 1993
页数:6
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