Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates

被引：0
|
作者：
Benoit, Robert R. [1 ]
Cheng, Christopher Y. [2 ]
Rudy, Ryan Q. [1 ]
Polcawich, Ronald G. [1 ]
Pulskamp, Jeffrey S. [1 ]
Potrepka, Daniel M. [1 ]
Hanrahan, Brendan M. [1 ]
Trolier-McKinstry, Susan [2 ,3 ]
机构：
[1] US Army, Res Lab, Sensors & Electron Devices Directorate, Adelphi, MD 20783 USA
[2] Penn State Univ, Mat Res Inst, State Coll, PA USA
[3] Penn State Univ, Mat Sci Eng Dept, State Coll, PA USA
来源：
2018 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP) | 2018年
关键词：
Lead Zirconate Titanate; PZT; Silicon-on-Sapphire; MEMS; PZT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Sputtered Pb(Zr52Ti48)O-3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in P-MAX (46.2 vs. 42.1 mu V/cm(2)) and PREM (22.0 vs. 16.5 mu V/cm(2)) over films deposited on Si. A decrease in maximum epsilon r from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangent are studied using fabricated capacitor structures.
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页数：3
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