Deposition of II/VI thin films from novel single-source precursors

被引：0
|
作者：
Afzaal, M [1 ]
Malik, MA [1 ]
O'Brien, P [1 ]
Park, JH [1 ]
机构：
[1] Univ Manchester, Manchester Mat Sci Ctr, Manchester M13 9PL, Lancs, England
来源：
PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS | 2003年 / 744卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The compound [MeCd((SePPr2)-Pr-i)(2)N](2) is used as a single-source precursor to cadmium selenide films in a low-pressure chemical vapour deposition process. Thermogravimetric analysis (TGA) shows that the precursor is reasonably volatile, making it suitable for the deposition of thin films As-deposited films were identified as CdSe confirmed by X-ray powder diffraction (XRPD) and their morphologies were studied by scanning electron microscope (SEM).
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页码：237 / 242
页数：6
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