Effects of light on ferroelectric polarization and leakage current

被引：10
|
作者：
Borkar, Hitesh [1 ,2 ]
Kumar, Ashok [1 ,2 ]
机构：
[1] CSIR Natl Phys Lab, Dr KS Krishnan Marg, New Delhi 110012, India
[2] CSIR NPL Campus, Acad Sci & Innovat Res AcSIR, Dr KS Krishnan Road, New Delhi 110012, India
来源：
VACUUM | 2018年 / 153卷
关键词：
D O I：
10.1016/j.vacuum.2018.03.062
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the enhancement of polarization in polycrystalline ferroelectric thin films under illumination of light. The (Pb0.6Li0.2Bi0.2) (Zr0.2Ti0.8)O-3 (PLBZT) thin films were fabricated on a Pt/TiO2/SiO2/Si (100) substrate by pulsed-laser deposition (PLD) technique. The illumination of weak monochromatic light having a wavelength comparable to the bandgap of PLBZT showed the development of non-equilibrium charge carriers which enhance switchable polarization and displacement current. A Positive-up Negative-down (PUND) analysis also supports the enhancement of switchable polarization under illumination. The fatigue test indicates nearly 20-30% decrease in polarization after a long time write and read cycles. These results may provide an extra degree of freedom to create electrical WRITE and optical READ logic states. (C) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码：91 / 95
页数：5
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