Broadband electromagnetic wave absorption properties and mechanism of MoS2/rGO nanocomposites

被引：28
|
作者：
Ding, Yi [1 ,2 ,3 ]
Zhao, Xuan [1 ,2 ]
Li, Qi [1 ,2 ]
Zhang, Zheng [1 ,2 ]
Kang, Zhuo [1 ,2 ]
Liao, Qingliang [1 ,2 ]
Zhang, Yue [1 ,2 ]
机构：
[1] Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Beijing Key Lab Adv Energy Mat & Technol, Beijing 100083, Peoples R China
[2] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China
[3] State Key Lab Adv Power Transmiss Technol, Beijing 102209, Peoples R China
来源：
MATERIALS CHEMISTRY FRONTIERS | 2021年 / 5卷 / 13期
基金：
中国国家自然科学基金;
关键词：
MICROWAVE-ABSORPTION; DIELECTRIC LOSS; GRAPHENE; PERFORMANCE; COMPOSITES; NANOSHEETS; EFFICIENT;
D O I：
10.1039/d1qm00364j
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Molybdenum disulfide/reduced graphene oxide (MoS2/rGO) nanocomposites are successfully prepared as enhanced electromagnetic wave absorbers using a facile ultrasonic dispersion method. The electromagnetic parameters of the MoS2/rGO nanocomposites are modulated to achieve enhanced electromagnetic wave absorption performance. By regulating the filler loadings of MoS2 and rGO to 10 and 5% respectively, the maximum reflection loss of -26.7 dB and effective absorption bandwidth of 5.05 GHz can be obtained. Furthermore, the electromagnetic wave absorption mechanism of the MoS2/rGO nanocomposites has been thoroughly studied. The enhanced microwave absorption performance of the MoS2/rGO nanocomposites is mainly originated from dielectric loss and conductive loss. The interfacial polarization relaxation greatly plays a key role in enhanced electromagnetic wave absorption due to the larger specific surface area and the multiple heterointerfaces. MoS2/rGO nanocomposites exhibit promising electromagnetic wave absorption performance including thin thickness, lightweight and wide effective absorption bandwidth. Overall, MoS2/rGO nanocomposites as enhanced absorbers have great potential in electromagnetic wave absorption fields.
引用
收藏
页码：5063 / 5070
页数：8
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