Insights into radiation displacement defect in an insulated-gate bipolar transistor

The effects of the radiation displacement defect on an insulated-gate bipolar transistor are investigated using the computer-aided design simulation technology. DC characteristics, breakdown voltage, and power dissipation are analyzed according to the position, energy, and types of trap caused by the radiation effect. The on-current is degraded by 100% due to displacement defect, which is generated near the emitter-gate region. An acceptor-like trap with E-c - 0.4 eV shows the most significant degradation compared to an acceptor-like trap with E-c - 0.2 eV and a donor-like trap with E-v + 0.2 eV. At 300 K, the breakdown voltage is unaffected by radiation displacement defects but is significantly reduced in a high-temperature environment (425 K) because the depletion width becomes shorter due to the displacement defect. Power dissipation exhibits immunity to the displacement defect induced by radiation at both room temperature and high temperatures.