Enhanced piezoelectricity of thin film hafnia-zirconia (HZO) by inorganic flexible substrates

被引：24
|
作者：
Hsain, H. Alex [1 ,2 ]
Sharma, Pankaj [2 ]
Yu, Hyeonggeun [1 ]
Jones, Jacob L. [1 ,2 ]
So, Franky [1 ]
Seidel, Jan [2 ]
机构：
[1] North Carolina State Univ, Mat Sci & Engn, Raleigh, NC 27695 USA
[2] Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
来源：
APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 02期
基金：
美国国家科学基金会; 澳大利亚研究理事会;
关键词：
ROOM-TEMPERATURE FERROELECTRICITY; PIEZORESPONSE; NANOSCALE; FIELD;
D O I：
10.1063/1.5031134
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hf0.5Zr0.5O2 (HZO) films are grown on rigid glass and flexible polyimide substrates using non-rapid thermal annealing. Films are comparatively investigated using macroscopic and local probe-based approaches to characterize their ferroelectric and piezoelectric properties. The polarization-electric field (P-E) measurements reveal that the ferroelectric characteristics of these thin films agree with the observed switchable piezoresponse hysteresis loops as well as electrically written, oppositely oriented domains. Moreover, the HZO thin films grown on flexible polyimide substrates display significantly enhanced piezoelectric response in comparison to the films grown on rigid substrates. This effect is likely due to improved domain wall motion caused by the mechanical release of the film-substrate couple. These findings suggest that inherently lead-free HZO thin films on flexible substrates are potential candidate materials for improved piezoelectric applications in wearable devices. Published by AIP Publishing.
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页数：5
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