High-reliability and low-dark-current 10-Gb/s planar superlattice avalanche photodiodes

被引：13

作者：

Watanabe, I

Nakata, T

Tsuji, M

Makita, K

Taguchi, K

机构：

[1] Opto-electronics Res. Laboratories, NEC Corporation, Tsukuba

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 12期

关键词：

avalanche photodiode; dark current; guard-ring; optical receiver; planar-structure; reliability; superlattice; 10; Gb/s;

D O I：

10.1109/68.643288

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For compact and high-sensitivity 10 Gb/s optical receiver applications, we have developed low-dark-current planar-structure InAlGaAs-InAlAs superlattice avalanche photodiodes with a Ti-implanted guard-ring, The APD's exhibited dark current as low as 0.36 mu A at a gain of 10, The temperature dependence of the dark current was confirmed to be in a sufficient level for practical 10-Gb/s applications, The APD's also exhibited a quantum efficiency of 67%, a gain-bandwidth-product of 110 GHz, a top 3-dB bandwidth of 15.2 GHz, and a minimum gain for 10-GHz bandwidth of 1.6, Preliminary aging test also showed a stable dark current operation after aging of over 2200 h at 200 degrees C, These high-reliability, low-dark-current, high-speed, and wide-dynamic-range characteristics are promising for 10-Gb/s high-sensitivity optical receiver use.

引用

页码：1619 / 1621

页数：3

共 46 条

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