Piezoelectric thin films: Evaluation of electrical and electromechanical characteristics for MEMS devices

We present a new measurement method to characterize piezoelectric thin films utilizing a four-point bending setup. In combination with a single- or a double-beam laser interferometer, this setup allows the determination of the effective transverse and longitudinal piezoelectric coefficients e(31,f) and d(33,f), respectively. Additionally, the dielectric coefficient and the large signal electrical polarization are measured to add further important characteristics of the film. These data are essential for piezoelectric thin film process specification and the design and qualification of microelectromechanical systems devices.