A WSi base electrode and a heavily-doped thin base layer for high-speed and low-power InGaP/GaAs HBTs

被引:0
|
作者
Oka, T
Ouchi, K
Mochizuki, K
Nakamura, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 3B期
关键词
HBTs; GaAs; InGaP; WSi; contact resistance; current gain;
D O I
10.1143/JJAP.36.1804
中图分类号
O59 [应用物理学];
学科分类号
摘要
The characteristics of a WSi base electrode and a heavily-doped thin base layer in InGaP/GaAs heterojunction bipolar transistors (HBTs) are demonstrated. An HBT with a new structure using a WSi base electrode and a heavily-doped thin base layer is proposed to achieve high-speed and low-power operation. WSi is shown to be useful in fabricating a base electrode for HBTs with a narrow base-contact width and a buried SiO2 structure, and a contact resistance of under 2 x 10(-7) Omega . cm(2) was obtained with a hole concentration of over 2 x 10(20) cm(-3) by annealing for 30 minutes at 400 degrees C. HBTs with a 30-nm-thick base doped to under 2 x 10(20) cm(-3) achieved current gain of more than 10.
引用
收藏
页码:1804 / 1806
页数:3
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