Spin Half-Adder

被引:0
|
作者
Patra, Moumita [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Mumbai 400076, Maharashtra, India
来源
关键词
Boolean algebra; circular current; memory devices; quantum transport;
D O I
10.1002/pssb.202000635
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A new proposal is given to design a spin half-adder in a nanojunction. It is well known that at finite voltage a net circulating current (known as "circular current") appears within a mesoscopic ring under the asymmetric ring-to-electrode interface configuration. This circular current induces a finite magnetic field at the center of the ring. Herein, this phenomenon is utilized to construct a spin halfadder. The circular current-induced magnetic field is used to regulate the alignments of local free spins; by their orientations the output states of the "sum" and "carry" are specified. All the outputs are spin based; therefore, the results get atomically stored in the system. The experimental possibilities of the proposed model are also illustrated.
引用
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页数:8
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