Interfacial roughness of Fe3Si/GaAs(001) films studied by X-ray crystal truncation rods

被引：0
|
作者：
Kaganer, Vladimir [1 ]
Jenichen, Bernd [1 ]
Shayduk, Roman [1 ]
Braun, Wolfgang [1 ]
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2009年 / 206卷 / 08期
关键词：
SCATTERING;
D O I：
10.1002/pssa.200881584
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Crystal truncation rods (CTRs) from thin Fe3Si films grown on GaAs(001) by molecular beam epitaxy (MBE) are measured at different stages of deposition. The films do not develop their own surface roughness but are conformal to the substrate, so that the substrate roughness governs the whole system. A factor that describes the roughness of a zinc blende structure in the beta model of terrace height probabilities is derived and applied to describe the experimental curves. We show that the beta model adequately describes the CTRs while the model of continuous Gaussian fluctuations of the surface height notably underestimates the root-mean-squared (rms) roughness. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1744 / 1747
页数：4
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