Kondo physics in single-molecule transistors

被引:0
|
作者
Natelson, D. [1 ]
Yu, L. H. [2 ]
Keane, Z. K. [2 ]
Ciszek, J. W. [3 ]
Cheng, L. [3 ]
Stewart, M. P. [3 ]
Tour, J. M. [3 ]
机构
[1] Rice Univ, Dept Phys & Astron, Dept Elect & Comp Engn, Houston, TX 77005 USA
[2] Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA
[3] Rice Univ, Dept Chem, Houston, TX 77005 USA
来源
关键词
molecular electronics; single-molecule transistor; Kondo effect;
D O I
暂无
中图分类号
O414.1 [热力学];
学科分类号
摘要
We have used an electromigration technique to prepare single-molecule transistors incorporating a family of transition metal coordination complexes. In a number of these devices, we observe the Kondo effect, the formation of a correlated many-body state comprising a spin localized to the molecule coupled to the conduction electrons in the Au leads. We will discuss the temperature dependence of the width and height of the Kondo resonance, and its variation as a function of transition metal. In devices based on Co-containing molecules, Kondo temperatures (similar to 70 K) comparable to those seen in scanning tunneling microscopy of Co atoms on bare Au are observed. The implications of these results, and the prospects of using single-molecule transistors as model quantum impurity systems will be discussed.
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页码:1365 / +
页数:2
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