Current-voltage characteristics of NSS transistors

被引：1
|
作者：
Fazio, R
Schön, G
Siewert, J
机构：
[1] DMFCI, I-95125 Catania, Italy
[2] INFM, I-95125 Catania, Italy
[3] Univ Karlsruhe, Inst Theoret Festkorperphys, D-76131 Karlsruhe, Germany
来源：
PHYSICA B-CONDENSED MATTER | 2000年 / 284卷
关键词：
Coulomb blockade; Josephson effect; single-electron tunneling;
D O I：
10.1016/S0921-4526(99)03038-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An interesting device to probe the coherent superposition of charge states in superconducting tunnel junctions is the normal-superconductor-superconductor (NSS) transistor where the SS junction is coupled to a normal lead. This system is particularly promising for an investigation of the interplay of coherence in the SS junction and the decoherence due to dissipative electron transitions: in the low-voltage regime Andreev reflection is the dominant transport mechanism, whereas at higher transport voltages Josephson-quasiparticle processes become possible. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1828 / 1829
页数：2
相关论文
共 50 条
  • [21] The importance of the current-voltage characteristics of FETs, HEMTs and bipolar transistors in contemporary circuit design
    Ladbrooke, P
    Bridge, J
    MICROWAVE JOURNAL, 2002, 45 (03) : 106 - +
  • [22] CURRENT-VOLTAGE CHARACTERISTICS OF MOS FIELD-EFFECT TRANSISTORS IN LINEAR AND SATURATION REGION
    SCHWAB, H
    ELECTRONICS LETTERS, 1974, 10 (17) : 356 - 358
  • [23] Influence of radiation on the current-voltage characteristics of AsGa Schottky gate field effect transistors
    Konakova, R.V.
    Milenin, V.V.
    Solov'ev, E.A.
    Statov, V.A.
    Stovpovoj, M.A.
    Rengevich, A.E.
    Tarielashvili, G.T.
    Izvestiya VUZ: Radioelektronika, 1999, 42 (04): : 73 - 76
  • [24] Influence of Gate Dielectrics of Field-Effect Graphene Transistors on Current-Voltage Characteristics
    Abramov I.I.
    Kolomeitseva N.V.
    Labunov V.A.
    Romanova I.A.
    Shcherbakova I.Y.
    Russian Microelectronics, 2021, 50 (02) : 118 - 125
  • [25] Interface-trap Charges on Recombination DC Current-Voltage Characteristics in MOS Transistors
    Chen, Zuhui
    Jie, Bin B.
    Sah, Chih-Tang
    NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION, 2008, : 869 - 872
  • [26] Effects of fabrication process on current-voltage characteristics of carbon nanotube field effect transistors
    Mizutani, T
    Iwatsuki, S
    Ohno, Y
    Kishimoto, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4A): : 1599 - 1602
  • [27] Origin of hysteresis in current-voltage characteristics of polycrystalline silicon thin-film transistors
    Lin, Horng-Chih
    Hung, Cheng-Hsiung
    Chen, Wei-Chen
    Lin, Zer-Ming
    Hsu, Hsing-Hui
    Hunag, Tiao-Yuang
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (05)
  • [28] Comparison of Fitting Current-Voltage Characteristics Curves of FinFET Transistors with Various Fixed Parameters
    Yang, Hsin-Chia
    Chi, Sung-Ching
    Liao, Wen-Shiang
    APPLIED SCIENCES-BASEL, 2022, 12 (20):
  • [29] CURRENT-VOLTAGE CHARACTERISTICS OF SI-BIPOLAR JUNCTION TRANSISTORS OPERATING IN THE CUTOFF MODE
    JANG, SL
    SOLID-STATE ELECTRONICS, 1993, 36 (02) : 291 - 292
  • [30] Impurity Deionization Effects on Surface Recombination DC Current-Voltage Characteristics in MOS Transistors
    Chen Zuhui
    Jie Binbin
    Sah Chihtang
    JOURNAL OF SEMICONDUCTORS, 2010, 31 (12)
12345