ZnO layers grown by Atomic Layer Deposition: A new material for transparent conductive oxide

被引：96
|
作者：
Godlewski, M. [1 ,2 ]
Guziewicz, E. [1 ]
Luka, G. [1 ]
Krajewski, T. [1 ]
Lukasiewicz, M. [1 ,2 ]
Wachnicki, L. [1 ,2 ]
Wachnicka, A. [1 ,2 ]
Kopalko, K. [1 ]
Sarem, A. [3 ]
Dalati, B. [3 ]
机构：
[1] Polish Acad Sci, Inst Phys, Warsaw, Poland
[2] Cardinal Stefan Wyszynski Univ, Coll Sci, Dept Math & Nat Sci, Warsaw, Poland
[3] Tishreen Univ, Fac Sci, Dept Phys, Latakia, Syria
来源：
THIN SOLID FILMS | 2009年 / 518卷 / 04期
关键词：
Atomic Layer Deposition; Photovoltaics; ZnO; Transparent conductive oxides; CdTe; Organic materials; THIN-FILMS; SOLAR-CELLS;
D O I：
10.1016/j.tsf.2009.04.066
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We demonstrate possibility of a control (by selection of zinc precursors and variation of a growth temperature) of electrical properties of ZnO films grown by Atomic Layer Deposition (ALD). ZnO films grown by ALD are used in test photovoltaic devices (solar cells) as transparent conductive oxides for upper, transparent layer in inorganic and organic solar cells. and as n-type partners of p-type CdTe. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1145 / 1148
页数：4
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