DC characteristics of SiC power Schottky diodes modelling in spice

被引：0
|
作者：
Zarebski, Janusz [1 ]
Dabrowski, Jacek [1 ]
机构：
[1] Gdynia Maritime Univ, Dept Marine Elect, PL-81225 Gdynia, Poland
来源：
INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS | 2006年 / 36卷 / 03期
关键词：
silicon carbide (SiC); schottky barrier diodes (SBDs); modelling; self-heating; electrothermal macromodel; SPICE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper the problem of SPICE modelling of the class of silicon-carbide (SiC) Schottky diodes with thermal effects (self-heating) taken into account is considered. Since April 2001 the SiC Schottky diodes made by Infineon Technologies have been commercially attainable. In the paper the SPICE electrothermal (including self-heating) macromodel of Infineon Technologies SiC Schottky diode is presented and in detail investigated. The considered macromodel has been verified experimentally. The silicon-carbide SDP04S60 rectifier has been tested. The nonisothermal characteristics obtained from measurements and SPICE calculations of SDP04S60 diode are compared. Due to the unacceptably large differences between measurements and calculations, some modifications of the macromodel have been proposed.
引用
收藏
页码：123 / 126
页数：4
相关论文
共 50 条
  • [11] System modeling and characterization of SiC schottky power diodes
    Zhang, Hui
    Tolbert, Leon M.
    Ozpineci, Burak
    PROCEEDINGS OF THE 2006 IEEE WORKSHOP ON COMPUTERS IN POWER ELECTRONICS, 2006, : 199 - +
  • [12] The Measurement and SPICE Modelling of Schottky Barrier Diodes Appropriate for Use as Bypass Diodes within Photovoltaic Modules
    Coetzer, Kurt Michael
    Rix, Arnold Johan
    Wiid, Pieter Gideon
    ENERGIES, 2022, 15 (13)
  • [13] ON THE REVERSE BLOCKING CHARACTERISTICS OF SCHOTTKY POWER DIODES
    TU, SHL
    BALIGA, BJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (12) : 2813 - 2814
  • [14] Effect of high temperature irradiation with 15 MeV protons on characteristics of power SiC Schottky diodes
    Lebedev, Alexander A.
    Kozlovski, Vitali V.
    Levinshtein, Michael E.
    Ivanov, Anton E.
    Davydovskaya, Klava S.
    SOLID-STATE ELECTRONICS, 2021, 181
  • [15] Quantum modelling of I-V characteristics for 4H-SiC Schottky barrier diodes
    Blasciuc-Dimitriu, C
    Horsfall, AB
    Wright, NG
    Johnson, CM
    Vassilevski, KV
    O'Neill, AG
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (01) : 10 - 15
  • [16] Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters
    Funaki, Tsuyoshi
    Balda, Juan C.
    Junghans, Jeremy
    Jangwanitlert, Anuwat
    Mounce, Sharmila
    Barlow, Fred D.
    Mantooth, H. Alan
    Kimoto, Tsunenobu
    Hikihara, Takashi
    IEICE ELECTRONICS EXPRESS, 2005, 2 (03): : 97 - 102
  • [17] Modelling power diodes for power electronic circuits simulation with SPICE2
    Tatakis, E.
    EPE Journal (European Power Electronics and Drives Journal), 1992, 2 (04):
  • [18] Performance of SiC Schottky diodes
    Galigekere, Veda Prakash
    Kazimierczuk, Marian K.
    2007 50TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-3, 2007, : 568 - 571
  • [19] Characteristics of Ni/SiC Schottky diodes grown by ICP-CVD
    Gil, Tae-Hyun
    Kim, Han-Soo
    Lee, Jong-Wook
    Kim, Yong-Sang
    SOLID-STATE ELECTRONICS, 2006, 50 (9-10) : 1510 - 1514
  • [20] . Behavioural Electro-Thermal Modelling of SiC Merged PiN Schottky Diodes
    Zubert, M.
    Janicki, M.
    Napieralska, M.
    Jablonski, G.
    Starzak, L.
    Napieralski, A.
    SCIENTIFIC COMPUTING IN ELECTRICAL ENGINEERING (SCEE 2010), 2012, 16 : 223 - 231
12345