DDFV SCHEMES FOR SEMICONDUCTORS ENERGY-TRANSPORT MODELS

被引：0
|
作者：
Lissoni, Giulia [1 ]
机构：
[1] Univ Nantes, LMJL, CNRS, Nantes, France
来源：
ALGORITMY 2020: 21ST CONFERENCE ON SCIENTIFIC COMPUTING | 2020年
关键词：
DDFV; finite volumes; energy-transport; semiconductor device; diode; FINITE-VOLUME METHOD;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
We propose a Discrete Duality Finite Volume scheme (DDFV for short) for an energy transport model for semiconductors. As in the continuous case, thanks to a change of variables into the so-called "entropic variables", we are able to prove a discrete entropy-dissipation estimate, which gives a priori estimates for the problem. We perform some numerical tests for the 2D ballistic diode, by comparing the Chen model and the Lyumkis model.
引用
收藏
页码：31 / 40
页数：10
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