Numerical Schemes for Semiconductors Energy-Transport Models

被引：0
|
作者：
Bessemoulin-Chatard, Marianne [1 ,2 ]
Chainais-Hillairet, Claire [3 ]
Mathis, Helene [1 ,2 ]
机构：
[1] Univ Nantes, Lab Math Jean Leray, BP 92208, F-44322 Nantes 3, France
[2] CNRS, UMR 6629, BP 92208, F-44322 Nantes 3, France
[3] Univ Lille, CNRS, UMR 8524, Lab Paul Painleve, F-59000 Lille, France
来源：
FINITE VOLUMES FOR COMPLEX APPLICATIONS IX-METHODS, THEORETICAL ASPECTS, EXAMPLES, FVCA 9 | 2020年 / 323卷
关键词：
Energy-tranport model; Finite volumes; Entropy method; EXISTENCE ANALYSIS; FINITE-ELEMENT; DISCRETIZATION; SYSTEM;
D O I：
10.1007/978-3-030-43651-3_5
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
We introduce some finite volume schemes for unipolar energy-transport models. Using a reformulation in dual entropy variables, we can show the decay of a discrete entropy with control of the discrete entropy dissipation.
引用
收藏
页码：75 / 90
页数：16
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