MgO-Based Epitaxial Magnetic Tunnel Junctions Using Fe-V Electrodes

被引：26
|
作者：
Bonell, Frederic [1 ]
Andrieu, Stephane [1 ]
Bertran, Francois [2 ]
Lefevre, Patrick [2 ]
Ibrahimi, Amina Taleb [2 ]
Snoeck, Etienne [3 ]
Tiusan, Coriolan-Viorel [1 ]
Montaigne, Francois [1 ]
机构：
[1] Univ H Poincare, CNRS, Inst Jean Lamour, UMR 7198, F-54506 Nancy, France
[2] Synchrotron SOLEIL, F-91192 Gif Sur Yvette, France
[3] CNRS, CEMES, F-31055 Toulouse, France
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2009年 / 45卷 / 10期
关键词：
Dislocation; epitaxial magnetic tunnel junction; Fe-V alloy; MgO; spin polarization; ROOM-TEMPERATURE; MAGNETORESISTANCE; STRAIN;
D O I：
10.1109/TMAG.2009.2022644
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To examine the influence of the barrier quality in fully epitaxial Fe/MgO/Fe(001) magnetic tunnel junctions (MTJs), we propose to use Fe-V alloys as magnetic electrodes. This leads to a reduced misfit with MgO. We actually observe, by high-resolution electron microscopy (HREM) and local strain measurements, that the misfit dislocations density in the MgO barrier is lower when it is grown on Fe-V(001). This improvement of the crystalline quality of the MgO barrier actually leads to a significant increase of the tunnel magneto-resistance (TMR), despite the loss of spin polarization (SP) in these alloys, which was measured by spin-polarized X-ray photoelectron spectroscopy (SR-XPS).
引用
收藏
页码：3467 / 3471
页数：5
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