MgO-Based Epitaxial Magnetic Tunnel Junctions Using Fe-V Electrodes

被引：26

作者：

Bonell, Frederic ^{[1
]}

Andrieu, Stephane ^{[1
]}

Bertran, Francois ^{[2
]}

Lefevre, Patrick ^{[2
]}

Ibrahimi, Amina Taleb ^{[2
]}

Snoeck, Etienne ^{[3
]}

Tiusan, Coriolan-Viorel ^{[1
]}

Montaigne, Francois ^{[1
]}

机构：

[1] Univ H Poincare, CNRS, Inst Jean Lamour, UMR 7198, F-54506 Nancy, France

[2] Synchrotron SOLEIL, F-91192 Gif Sur Yvette, France

[3] CNRS, CEMES, F-31055 Toulouse, France

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2009年 / 45卷 / 10期

关键词：

Dislocation; epitaxial magnetic tunnel junction; Fe-V alloy; MgO; spin polarization; ROOM-TEMPERATURE; MAGNETORESISTANCE; STRAIN;

D O I：

10.1109/TMAG.2009.2022644

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To examine the influence of the barrier quality in fully epitaxial Fe/MgO/Fe(001) magnetic tunnel junctions (MTJs), we propose to use Fe-V alloys as magnetic electrodes. This leads to a reduced misfit with MgO. We actually observe, by high-resolution electron microscopy (HREM) and local strain measurements, that the misfit dislocations density in the MgO barrier is lower when it is grown on Fe-V(001). This improvement of the crystalline quality of the MgO barrier actually leads to a significant increase of the tunnel magneto-resistance (TMR), despite the loss of spin polarization (SP) in these alloys, which was measured by spin-polarized X-ray photoelectron spectroscopy (SR-XPS).

引用

页码：3467 / 3471

页数：5

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