Mapping the magnetic anisotropy in (Ga,Mn)As nanostructures

被引：15
|
作者：
Hoffmann, F. [1 ]
Woltersdorf, G. [1 ]
Wegscheider, W. [1 ]
Einwanger, A. [1 ]
Weiss, D. [1 ]
Back, C. H. [1 ]
机构：
[1] Univ Regensburg, Dept Phys, D-93040 Regensburg, Germany
来源：
PHYSICAL REVIEW B | 2009年 / 80卷 / 05期
关键词：
coercive force; ferromagnetic resonance; gallium arsenide; magnetic anisotropy; manganese compounds; nanostructured materials; semimagnetic semiconductors; FERROMAGNETIC-RESONANCE; GA1-XMNXAS;
D O I：
10.1103/PhysRevB.80.054417
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Anisotropic strain relaxation in (Ga,Mn)As nanostructures was studied combining time-resolved Kerr microscopy and ferromagnetic resonance techniques. Local resonance measurements on individual narrow stripes patterned along various crystallographic directions reveal that the easy axis of the magnetization can be forced perpendicular to the strain relaxation direction. Spatially resolved measurements on disk-shaped and rectangular (Ga,Mn)As structures allow us to directly visualize these local changes in the magnetic anisotropy. We show that the strain-induced edge anisotropy allows for an effective control of the coercive field in stripe structures.
引用
收藏
页数：5
相关论文
共 50 条
  • [21] Magnetic domain pattern asymmetry in (Ga, Mn)As/(Ga, In)As with in-plane anisotropy
    Diez, L. Herrera
    Rapp, C.
    Schoch, W.
    Limmer, W.
    Gourdon, C.
    Jeudy, V.
    Honolka, J.
    Kern, K.
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (08)
  • [22] Magnetic domain pattern asymmetry in (Ga, Mn)As/(Ga,In)As with in-plane anisotropy
    Herrera Diez, L. (liza.herreradiez@grenoble.cnrs.fr), 1600, American Institute of Physics Inc. (111):
  • [23] Electric-field control of the magnetic anisotropy in an ultrathin (Ga,Mn)As/(Ga,Mn)(As,P) bilayer
    Niazi, T.
    Cormier, M.
    Lucot, D.
    Largeau, L.
    Jeudy, V.
    Cibert, J.
    Lemaitre, A.
    APPLIED PHYSICS LETTERS, 2013, 102 (12)
  • [24] Magnetic anisotropy in a ferromagnetic (Ga,Mn)Sb thin film
    Nishitani, Y.
    Endo, M.
    Matsukura, F.
    Ohno, H.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (10): : 2681 - 2684
  • [25] Magnetic anisotropy switching in (Ga,Mn)As with increasing hole concentration
    Hamaya, K.
    Watanabe, T.
    Taniyama, T.
    Oiwa, A.
    Kitamoto, Y.
    Yamazaki, Y.
    PHYSICAL REVIEW B, 2006, 74 (04)
  • [26] Magnetoresistance anomalies in (Ga,Mn)As epilayers with perpendicular magnetic anisotropy
    Xiang, G
    Holleitner, AW
    Sheu, BL
    Mendoza, FM
    Maksimov, O
    Stone, MB
    Schiffer, P
    Awschalom, DD
    Samarth, N
    PHYSICAL REVIEW B, 2005, 71 (24)
  • [27] Induced magnetic anisotropy in lifted (Ga,Mn)As thin films
    Greullet, F.
    Ebel, L.
    Muenzhuber, F.
    Mark, S.
    Astakhov, G. V.
    Kiessling, T.
    Schumacher, C.
    Gould, C.
    Brunner, K.
    Ossau, W.
    Molenkamp, L. W.
    APPLIED PHYSICS LETTERS, 2011, 98 (23)
  • [28] Anisotropy and Barkhausen jumps in diluted magnetic semiconductor (Ga,Mn)As
    Hayashi, T
    Katsumoto, S
    Hashimoto, Y
    Endo, A
    Kawamura, M
    Zalalutdinov, M
    Iye, Y
    PHYSICA B, 2000, 284 : 1175 - 1176
  • [29] Control of magnetic anisotropy by external fields in ferromagnetic (Ga,Mn)As
    Sapega, V. F.
    Kraynov, I. V.
    Sablina, N. I.
    Dimitriev, G. S.
    Averkiev, N. S.
    Ploog, K. H.
    SOLID STATE COMMUNICATIONS, 2013, 157 : 34 - 37
  • [30] Magnetic anisotropy investigations of (Ga,Mn)As with a large epitaxial strain
    Juszynski, P.
    Gryglas-Borysiewicz, M.
    Szczytko, J.
    Tokarczyk, M.
    Kowalski, G.
    Sadowski, J.
    Wasik, D.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2015, 396 : 48 - 52
12345