Intense THz-radiation from semiconductors under magnetic field irradiated with femtosecond laser pulses

被引：2

作者：

Liu, ZL ^{[1
]}

Ohtake, H ^{[1
]}

Izumida, S ^{[1
]}

Ono, S ^{[1
]}

Sarukura, N ^{[1
]}

机构：

[1] Inst Mol Sci, Okazaki, Aichi 4448585, Japan

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2000年 / 32卷 / 4-5期

关键词：

femtosecond laser pulses; semiconductors; THz-radiation;

D O I：

10.1023/A:1007043616293

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The THz-radiation power from InAs reaches sub-mW level in a 1.7-T magnetic field irradiated with femtosecond laser pulses of 1.5-W average power. The THz-radiation power is related almost quadratically both to the magnetic field and to the excitation laser power. Furthermore, the THz-radiation spectrum is found to be controlled by the excitation pulsewidth, chirp direction of the excitation pulse, and the magnetic field.

引用

页码：521 / 529

页数：9

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