A 0.6-V low power UWB CMOS LNA

被引：37
|
作者：
Yu, Yueh-Hua [1 ]
Chen, Yi-Jan Emery
Heo, Deukhyoun
机构：
[1] Natl Taiwan Univ, Grad Inst Elect Engn, Grad Inst Commun Engn, Taipei 106, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan
[3] Washington State Univ, Sch Elect Engn & Comp Sci, Pullman, WA 99164 USA
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2007年 / 17卷 / 03期
关键词：
broadband; CMOS; distributed amplifier; low noise amplifier (LNA); low power; ultra-wideband (UWB);
D O I：
10.1109/LMWC.2006.890502
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the design of a low-power ultra-wideband low noise amplifier in 0.18-mu m CMOS technology. The inductive degeneration is applied to the conventional distributed amplifier design to reduce the broadband noise figure under low power operation condition. A common-source amplifier is cascaded to the distributed amplifier to improve the gain at high frequency and extend the bandwidth. Operated at 0.6 V, the integrated UWB CMOS LNA consumes 7 mW. The measured gain of the LNA is 10 dB with the bandwidth from 2.7 to 9.1 GHz. The input and output return loss is more than 10 dB. The noise figure of the LNA varies from 3.8 to 6.9 dB, with the average noise figure of 4.65 dB. The low power consumption of this work leads to the excellent figure of gain-bandwidth product (GBP) per milliwatt.
引用
收藏
页码：229 / 231
页数：3
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