The influence of strain on the diffusion of Si dimers on Si(001)

被引：24
|
作者：
Zoethout, E
Gürlü, O
Zandvliet, HJW
Poelsema, B
机构：
[1] Univ Twente, Dept Appl Phys, NL-7500 AE Enschede, Netherlands
[2] Univ Twente, MESA Res Inst, NL-7500 AE Enschede, Netherlands
来源：
SURFACE SCIENCE | 2000年 / 452卷 / 1-3期
关键词：
scanning tunneling microscopy; silicon; surface diffusion;
D O I：
10.1016/S0039-6028(00)00338-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The influence of lattice mismatch-induced tensile strain on the diffusion of Si dimers on Si(001) has been studied. The rate of surface diffusion of a Si dimer along the substrate dimer rows is relatively insensitive to tensile strain, whereas the rate of diffusion for a Si dimer across the substrate dimer rows is significantly enhanced. The insensitivity of the along row diffusion rate for tensile strain is attributed to the presence of a dissociative intermediate state of the ad-dimer during diffusion rather than diffusion as a solid unit. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码：247 / 252
页数：6
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