0.07 um InPHEMT MMIC technology for G-band power amplifiers

被引：2
|
作者：
Lai, R. [1 ]
Huang, P. [1 ]
Grundbacher, R. [1 ]
Farkas, D. [1 ]
Cavus, A. [1 ]
Liu, P. H. [1 ]
Chin, P. [1 ]
Chou, Y. C. [1 ]
Barsky, M. [1 ]
Tsai, R. [1 ]
Raja, R. [1 ]
Oki, A. [1 ]
机构：
[1] Northrop Grumman Space Technol, 1 Space Pk, Redondo Beach, CA 90278 USA
来源：
2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS | 2006年
关键词：
D O I：
10.1109/ICIPRM.2006.1634106
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a state-of-the art 0.07 um T-gate InP HEMT MMIC power amplifier at G-band frequencies. The fixtured amplifier MMIC exhibits greater than 20 mW output power at 175-191 GHz with a peak power of 25 mW output power at 184 GHz. The power density of the output stage is greater than 150 mW/mm and power added efficiency was 9.5%. We believe this represents the highest combination of output power at the highest frequency band ever reported for a solid state amplifier MMIC.
引用
收藏
页码：39 / +
页数：2
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