InPHEMT amplifier development for G-band (140-220 GHz) applications

被引：33
|
作者：
Lai, R [1 ]
Barsky, M [1 ]
Grundbacher, R [1 ]
Liu, PH [1 ]
Chin, TP [1 ]
Nishimoto, M [1 ]
Elmajarian, R [1 ]
Rodriguez, R [1 ]
Tran, L [1 ]
Gutierrez, A [1 ]
Oki, A [1 ]
Streit, D [1 ]
机构：
[1] TRW, Semicond Prod Ctr, Redondo Beach, CA 90278 USA
来源：
INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年
关键词：
D O I：
10.1109/IEDM.2000.904286
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we describe a unique InP HEMT MMIC process that has been developed for the demonstration of the first ever G-band (140-220 GHz) amplifiers. This process combines enhanced InP HEMT profiles with a 70 nm T-gate process and a dry via etch process to achieve a high maximum gain of greater than 8 dB at 200 GHz and the highest gain amplifiers ever demonstrated (15 dB at 215 GHz).
引用
收藏
页码：175 / 177
页数：3
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