InPHEMT amplifier development for G-band (140-220 GHz) applications

被引：33

作者：

Lai, R ^{[1
]}

Barsky, M ^{[1
]}

Grundbacher, R ^{[1
]}

Liu, PH ^{[1
]}

Chin, TP ^{[1
]}

Nishimoto, M ^{[1
]}

Elmajarian, R ^{[1
]}

Rodriguez, R ^{[1
]}

Tran, L ^{[1
]}

Gutierrez, A ^{[1
]}

Oki, A ^{[1
]}

Streit, D ^{[1
]}

机构：

[1] TRW, Semicond Prod Ctr, Redondo Beach, CA 90278 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904286

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we describe a unique InP HEMT MMIC process that has been developed for the demonstration of the first ever G-band (140-220 GHz) amplifiers. This process combines enhanced InP HEMT profiles with a 70 nm T-gate process and a dry via etch process to achieve a high maximum gain of greater than 8 dB at 200 GHz and the highest gain amplifiers ever demonstrated (15 dB at 215 GHz).

引用

页码：175 / 177

页数：3

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