Manipulation of strain relaxation in metamorphic heterostructures

被引：19
|
作者：
Tangring, I. [1 ]
Wang, S. M.
Zhu, X. R.
Larsson, A.
Lai, Z. H.
Sadeghi, M.
机构：
[1] Chalmers Univ Technol, Photon Lab, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
[2] Chalmers Univ Technol, Nanofabricat Lab, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 07期
关键词：
D O I：
10.1063/1.2435609
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors have discovered that high doping densities in an alloy graded InGaAs buffer have dramatic effects on strain relaxation dynamics and consequently surface and optical qualities in metamorphic heterostructures. Compared with undoped graded buffers, the use of Be doping significantly improves structural, surface, and optical qualities while the use of Si doping deteriorates all these properties. This discovery is significant for the realization of metamorphic optoelectronic devices. (c) 2007 American Institute of Physics.
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页数：3
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