Effect of strain relaxation layers in high Indium content metamorphic InGaAs/InAlAs modulation doped heterostructures

被引：2

作者：

Gozu, S ^{[1
]}

Kita, T ^{[1
]}

Sato, H ^{[1
]}

Yamada, S ^{[1
]}

机构：

[1] RIKEN, Inst Phys & Chem Res, Semicond Lab, Wako, Saitama 3510198, Japan

来源：

2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/ICIPRM.2001.929017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated effect of residual strain appeared in the transport and optical properties of high indium content metamorphic In0.75Ga0.25As/In0.75Al0.25As modulation doped heterostructures grown via (inverse step: IS-) step graded buffer (SGB). The effect of residual strain was controlled by IS structure and a drastic decrease of residual strain (about one third) was observed. We have also observed an improved low temperature (77K) electron mobility, when the IS buffer was used. We found that the residual strain is one of the important interface condition which determines the low temperature (77K) electron mobility.

引用

页码：55 / 58

页数：4

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