Effect of strain relaxation layers in high Indium content metamorphic InGaAs/InAlAs modulation doped heterostructures

被引：2

作者：

Gozu, S ^{[1
]}

Kita, T ^{[1
]}

Sato, H ^{[1
]}

Yamada, S ^{[1
]}

机构：

[1] RIKEN, Inst Phys & Chem Res, Semicond Lab, Wako, Saitama 3510198, Japan

来源：

2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/ICIPRM.2001.929017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated effect of residual strain appeared in the transport and optical properties of high indium content metamorphic In0.75Ga0.25As/In0.75Al0.25As modulation doped heterostructures grown via (inverse step: IS-) step graded buffer (SGB). The effect of residual strain was controlled by IS structure and a drastic decrease of residual strain (about one third) was observed. We have also observed an improved low temperature (77K) electron mobility, when the IS buffer was used. We found that the residual strain is one of the important interface condition which determines the low temperature (77K) electron mobility.

引用

页码：55 / 58

页数：4

共 50 条

[41] PROCESS TECHNOLOGY FOR INGAAS/INALAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS ON INP SUBSTRATES
FINK, T
RAYNOR, B
HAUPT, M
KOHLER, K
BRAUNSTEIN, J
GRUN, N
HORNUNG, J
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06): : 3332 - 3336
[42] Enhanced optical responsivity of InAlAs/InGaAs metamorphic high mobility electron mobility using indium tin oxide transparent gate technology
Chiu, Hsien-Chin
Lin, Che-Kai
Lin, Chao-Wei
Chen, Ming-Yang
APPLIED PHYSICS LETTERS, 2008, 93 (04)
[43] Strain relaxation in high-mobility InAs inserted-channel heterostructures with metamorphic buffer
Mendach, S
Hu, CM
Heyn, C
Schnüll, S
Oepen, HP
Anton, R
Hansen, W
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 1204 - 1207
[44] Analysis of the Short-Channel Effect in 50 nm InAlAs/InGaAs Metamorphic High Electron Mobility Transistors
Lee, Jae-Seo
Oh, Jung-Hun
Lim, Byeong-Ok
Rhee, Jin-Koo
Kim, Sam-Dong
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (06) : 3267 - 3272
[45] Strain relaxation in high Ge content SiGe layers deposited on Si
Capellini, G.
De Seta, M.
Busby, Y.
Pea, M.
Evangelisti, F.
Nicotra, G.
Spinella, C.
Nardone, M.
Ferrari, C.
JOURNAL OF APPLIED PHYSICS, 2010, 107 (06)
[46] Effect of Strongly Mismatched GaAs and InAs Inserts in a InAlAs Buffer Layer on the Structural and Optical Properties of Metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs Quantum-Confined Heterostructures
V. A. Solov’ev
M. Yu. Chernov
O. S. Komkov
D. D. Firsov
A. A. Sitnikova
S. V. Ivanov
JETP Letters, 2019, 109 : 377 - 381
[47] Effect of Strongly Mismatched GaAs and InAs Inserts in a InAlAs Buffer Layer on the Structural and Optical Properties of Metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs Quantum-Confined Heterostructures
Solov'ev, V. A.
Chernov, M. Yu
Komkov, O. S.
Firsov, D. D.
Sitnikova, A. A.
Ivanov, S., V
JETP LETTERS, 2019, 109 (06) : 377 - 381
[48] Microstructures and strain relaxation in modulation-doped AlxGa1-xN/GaN heterostructures
Tan, WS
Shen, B
Sha, H
Cai, HL
Wu, XS
Zheng, YD
Jiang, SS
Zheng, WL
Jia, QJ
He, Q
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2004, 18 (07): : 989 - 998
[49] MODULATION-DOPED INALAS/INGAAS QUANTUM-WELL STRUCTURES FOR HIGH-ELECTRON-MOBILITY TRANSISTORS
KLEIN, W
BOHM, G
SEXL, M
GRIGULL, S
HEISS, H
TRANKLE, G
WEIMANN, G
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1306 - 1308
[50] Epitaxial lift-off of InGaAs/InAlAs metamorphic high electron mobility heterostructures and their van der Waals bonding on AIN ceramic substrates
Jeong, Yonkil
Shindo, Masanori
Akabori, Masashi
Suzuki, Toshi-kazu
APPLIED PHYSICS EXPRESS, 2008, 1 (02)

← 1 2 3 4 5 →