Towards a Hexagonal SiGe Semiconductor Laser.

被引：0

作者：

Tilburg, M. A. J., V ^{[1
]}

Dijkstra, A. ^{[1
]}

Fadaly, E. M. T. ^{[1
]}

Lange, V. T. V. ^{[1
]}

Verheijen, M. A. ^{[1
]}

Suckert, J. R. ^{[2
]}

Roedl, C. ^{[2
]}

Furthmueller, J. ^{[2
]}

Bechstedt, F. ^{[2
]}

Botti, S. ^{[2
]}

Busse, D. ^{[3
]}

Finley, J. J. ^{[3
]}

Bakkers, E. P. A. M. ^{[1
]}

Haverkort, J. E. M. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, Groene Loper 19, NL-5612 AP Eindhoven, Netherlands

[2] Friedrich Schiller Univ Jena, Inst Festkorpertheorie & Opt, Max Wien Pl 1, D-07743 Jena, Germany

[3] Tech Univ Munich, Walter Schottky Inst, Phys Dept, Coulombwall 4, D-85748 Munich, Germany

来源：

2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2020年

基金：

欧盟地平线“2020”;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5 mu m. (c) 2020 The Author(s)

引用

页数：2

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