Deposition of nitrogen doped tetrahedral amorphous carbon (ta-C:N) films by ion beam assisted filtered cathodic vacuum arc

被引：18
|
作者：
Cheah, LK
Xu, S
Tay, BK
机构：
[1] Research Laboratory 6, Sch. of Elec. and Electron. Eng., Nanyang Technological, 639798 Singapore
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 15期
关键词：
amorphous semiconductors; ion beams;
D O I：
10.1049/el:19970901
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An alternative approach to deposit ta-C:N films by ion assisted filtered cathodic vacuum are (IAFCVA) is presented and compared with ta-C films prepared by FCVA under nitrogen partial pressure. The electronic properties are strongly dependent on nitrogen partial pressure for both methods although the efficiency of doping is higher for IAFCVA.
引用
收藏
页码：1339 / 1340
页数：2
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