Binding energy of ionized-donor-bound excitons in the GaAs-AlxGa1-xAs quantum wells

被引：0
|
作者：
Liu, JJ [1 ]
Zhang, SF
Kong, XJ
Li, SS
机构：
[1] Hebei Normal Univ, Dept Phys, Shijiazhuang 050016, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2000年 / 17卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The binding energy of an exciton bound to an ionized donor impurity (D+,X) located st the center or the edge in GaAs-AlxGa1-xAs quantum wells is calculated variationally for the well width from 10 to 300 Angstrom by using a two-parameter wave function, The theoretical results are discussed and compared with the previous experimental results.
引用
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页码：358 / 359
页数：2
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