The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors

被引：24

作者：

Chen, TB

Luo, ZY

Cressler, JD

Isaacs-Smith, TF

Williams, JR

Chung, GL

Clark, SD

机构：

[1] Auburn Univ, Dept Elect & Comp Engn, Alabama Microelect Sci & Technol Ctr, Auburn, AL 36849 USA

[2] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

[3] Sterling Semicond, Tampa, FL 33619 USA

[4] NAVSEA Crane, Crane, IN 47522 USA

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 12期

关键词：

silicon carbide; MOS; radiation; passivation;

D O I：

10.1016/S0038-1101(02)00236-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The radiation response of SiO2 gate oxides grown on 4H-SiC to NO passivation is presented for the first time. The effects of gamma radiation on Q(eff) are similar for n-4H-SiC MOS capacitors both with and without NO passivation, but are different in sign (negative) compared to SiO2 on Si. The variation in D-it with total dose, however, is different for the passivated versus the unpassivated samples. Comparisons between Si Sol and 4H-SiC suggest that properly passivated SiC MOSFETs should have good radiation tolerance. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：2231 / 2235

页数：5

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