Terahert detection analysis of Nanowire Gated Field Effect Transistor

被引：0
|
作者：
Chen, Yu [1 ]
He, Jin [1 ,2 ]
Mu, Xuehao [2 ]
Lou, Haijun [2 ]
Zhang, Lining [2 ]
Song, Yan [2 ]
机构：
[1] Peking Univ, Shenzhen Grad Sch, Key Lab Integrated Microsyst, Shenzhen 518055, Peoples R China
[2] Peking Univ, EECS, TSRC Grp, Beijing, Peoples R China
来源：
EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical terahertz (THz) detection model of the Silicon nanowire MOSFET (NWFET) is developed in this paper. Beginning from the fundamental hydrodynamic transport equations, the expressions of the velocity spatial distribution and inversion charge transport are obtained. Under the reasonable boundary, an analytical model of the photoresponse of the NWFET is derived out. The comparison between analytical calculation and numerical results confirmed the proposed model. Moreover, the plasma wave transport behavior in the NWFET is analyzed in detail from the presented model and some significant characteristics are demonstrated.
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页码：108 / +
页数：2
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