High-Speed InGaAs/InAlGaAs Waveguide Photodiodes Grown on Silicon by Heteroepitaxy

被引:0
|
作者
Gao, Junyi [1 ]
Sun, Keye [1 ]
Jung, Daehwan [2 ]
Bowers, John [3 ]
Beling, Andreas [1 ]
机构
[1] Univ Virginia, Elect & Comp Engn Dept, Charlottesville, VA 22904 USA
[2] Korea Inst Sci & Technol, Ctr Optoelect Devices & Mat, Seoul 02792, South Korea
[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
关键词
III-V;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate III-V on silicon waveguide photodiodes with 200 nA dark current, 0.27 A/W fiber-coupled responsivity, and over 25 GHz 3-dB bandwidth. (C) 2020 The Author(s)
引用
收藏
页数:2
相关论文
共 50 条
  • [21] High-Speed Integrated Photodiodes
    Beling, Andreas
    Tzu, Ta Ching
    Gao, Junyi
    Morgan, Jesse S.
    Sun, Keye
    Ye, Nan
    Tossoun, Bassem
    Yu, Fengxin
    Yu, Qianhuan
    2019 24TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) AND 2019 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING AND COMPUTING (PSC), 2019,
  • [22] LATERAL HIGH-SPEED METAL-SEMICONDUCTOR METAL PHOTODIODES ON HIGH-RESISTIVITY INGAAS
    WEI, CJ
    KUHL, D
    BOTTCHER, EH
    BIMBERG, D
    KUPHAL, E
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (08) : 334 - 335
  • [23] High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes
    Ito, H
    Kodama, S
    Muramoto, Y
    Furuta, T
    Nagatsuma, T
    Ishibashi, T
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2004, 10 (04) : 709 - 727
  • [24] Low Dark Current and High Speed InGaAs Photodiode on CMOS-Compatible Silicon by Heteroepitaxy
    Song, Bowen
    Shi, Bei
    Suran-Brunelli, Simone Tommaso
    Zhu, Si
    Klamkin, Jonathan
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2022, 28 (02)
  • [25] High-speed InGaAs/InAlAs SACM avalanche photodiodes with robust optical & electrical overload
    Huang, Jack Jia-Sheng
    Chang, H. S.
    Jan, Yu-Heng
    Ni, C. J.
    Chen, H. S.
    Chou, Emin
    2019 IEEE PHOTONICS CONFERENCE (IPC), 2019,
  • [26] SILICON AVALANCHE PHOTODIODES FOR LOW-LIGHT, HIGH-SPEED SYSTEMS
    MACGREGOR, A
    PHOTONICS SPECTRA, 1991, 25 (02) : 139 - &
  • [27] SILICON AVALANCHE PHOTODIODES WITH LOW MULTIPLICATION NOISE AND HIGH-SPEED RESPONSE
    KANBE, H
    KIMURA, T
    MIZUSHIMA, Y
    KAJIYAMA, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) : 1337 - 1343
  • [28] High-speed uni-traveling-carrier photodiodes on silicon nitride
    Maes, Dennis
    Lemey, Sam
    Roelkens, Gunther
    Zaknoune, Mohammed
    Avramovic, Vanessa
    Okada, Etienne
    Szriftgiser, Pascal
    Peytavit, Emilien
    Ducournau, Guillaume
    Kuyken, Bart
    APL PHOTONICS, 2023, 8 (01)
  • [29] High-Speed Type-II InGaAs/GaAsSb Multiple Quantum-Well Integrated Waveguide Photodiodes at 2 μm Wavelength
    Tossoun, Bassem
    Wang, Ye
    Addamane, Sadhvikas
    Balakrishnan, Ganesh
    Holmes, Archie, Jr.
    Beling, Andreas
    30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC), 2017, : 419 - 420
  • [30] SiGe technology: Heteroepitaxy and high-speed microelectronics
    Mooney, PM
    Chu, JO
    ANNUAL REVIEW OF MATERIALS SCIENCE, 2000, 30 : 335 - 362