High-Speed InGaAs/InAlGaAs Waveguide Photodiodes Grown on Silicon by Heteroepitaxy

被引：0
|
作者：
Gao, Junyi [1 ]
Sun, Keye [1 ]
Jung, Daehwan [2 ]
Bowers, John [3 ]
Beling, Andreas [1 ]
机构：
[1] Univ Virginia, Elect & Comp Engn Dept, Charlottesville, VA 22904 USA
[2] Korea Inst Sci & Technol, Ctr Optoelect Devices & Mat, Seoul 02792, South Korea
[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2020年
关键词：
III-V;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate III-V on silicon waveguide photodiodes with 200 nA dark current, 0.27 A/W fiber-coupled responsivity, and over 25 GHz 3-dB bandwidth. (C) 2020 The Author(s)
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页数：2
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