The influence of high-energy lithium ion irradiation on electrical characteristics of silicon and GaAs solar cells

被引：8
|
作者：
Jayashree, B.
Radhakrishna, Ramani M. C.
Agrawal, Anil
Khan, Saif Ahmad
Meulenberg, A.
机构：
[1] Bangalore Univ, Dept Phys, Bangalore 560056, Karnataka, India
[2] ISRO Satellite Ctr, Power Syst Grp, Solar Panels Div, Bangalore 560017, Karnataka, India
[3] Interuniv Accelerator Ctr, Arun Asaf Ali Marg, New Delhi 110067, India
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2006年 / 53卷 / 06期
关键词：
GaAs; ion-irradiation; lithium; NIEL; photovoltaic cells; radiation effects; silicon;
D O I：
10.1109/TNS.2006.885840
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Space-grade Si and GaAs solar cells were irradiated with 15 & 40 MeV Li ions. Illuminated (AM0 condition) and unilluminated I-V curves reveal that the effect of high-energy Li ion irradiation has produced similar effects to that of proton irradiation. However, an additional, and different, defect mechanism is suggested to dominate in the heavier-ion results. Comparison is made with proton-irradiated solar-cell work and with non-ionizing energy-loss (NIEL) radiation-damage models.
引用
收藏
页码：3779 / 3785
页数：7
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