High resolution static SIMS imaging by time of flight SIMS

被引：17
|
作者：
Hoshi, T
Kudo, M
机构：
[1] ULVAC PHI Inc, Chigasaki, Kanagawa 2530084, Japan
[2] Sekei Univ, Dept Appl Phys, Tokyo 180, Japan
来源：
APPLIED SURFACE SCIENCE | 2003年 / 203卷
关键词：
TOF-SIMS; bunched imaging; aberration free imaging;
D O I：
10.1016/S0169-4332(02)00834-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
TOF-SIMS (TOF: time of flight) imaging has been widely used in many laboratories for surface characterization purposes as well as an actual problem solving tool. In this paper, to optimize the quality of TOF-SIMS imaging, we investigated the instrumental variables, which include the ion beam pulse width, the ion beam current, the use of beam bunching, and the primary ion beam species. These experimental parameters will determine the special resolution, sensitivity, and mass resolution. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：818 / 824
页数：7
相关论文
共 50 条
  • [41] SIMS depth profiling and TEM imaging of the SIMS altered layer
    Christofi, A.
    Walker, J. F.
    McPhail, D. S.
    APPLIED SURFACE SCIENCE, 2008, 255 (04) : 1381 - 1383
  • [42] Interest of silver and gold metallization for molecular SIMS and SIMS imaging
    Delcorte, A
    Bertrand, P
    APPLIED SURFACE SCIENCE, 2004, 231 : 250 - 255
  • [43] Static SIMS: towards unfragmented mass spectra - the G-SIMS procedure
    Gilmore, IS
    Seah, MP
    APPLIED SURFACE SCIENCE, 2000, 161 (3-4) : 465 - 480
  • [44] RADIATION EFFECTS IN STATIC SIMS OF POLYMERS
    LICCIARDELLO, A
    WENCLAWIAK, B
    BOES, C
    BENNINGHOVEN, A
    SURFACE AND INTERFACE ANALYSIS, 1994, 22 (1-12) : 528 - 531
  • [45] Determining oxygen isotope profiles in oxides with Time-of-Flight SIMS
    De Souza, RA
    Zehnpfenning, J
    Martin, M
    Maier, J
    SOLID STATE IONICS, 2005, 176 (15-16) : 1465 - 1471
  • [46] Time-of-flight-SIMS and XPS characterization of metal doped polymers
    Gross, T
    Retzko, I
    Friedrich, I
    Unger, W
    APPLIED SURFACE SCIENCE, 2003, 203 : 575 - 579
  • [47] A STUDY OF MATRIX EFFECTS IN CSI ON AU BY TIME-OF-FLIGHT SIMS
    KIM, YS
    MOON, DW
    LEE, JC
    KANG, HJ
    SURFACE SCIENCE, 1991, 242 (1-3) : 428 - 433
  • [48] Monitoring of cleanroom airborne molecular contamination by Time-of-Flight SIMS
    Goodman, GG
    Lindley, PM
    McCaig, LA
    INSTITUTE OF ENVIRONMENTAL SCIENCES AND TECHNOLOGY, PROCEEDINGS 1999: CONTAMINATION CONTROL - DESIGN, TEST, AND EVALUATION - PRODUCT RELIABILITY, 1999, : 131 - 137
  • [49] Static SIMS study of TiZrVNEG activation
    Matolín, V
    Johánek, V
    VACUUM, 2002, 67 (02) : 177 - 184
  • [50] IX70S HIGH-RESOLUTION IMAGING MAGNETIC-SECTOR SIMS
    DEMANET, C
    BROWN, A
    FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE, 1989, 334 (07): : 677 - 678
12345