High resolution static SIMS imaging by time of flight SIMS

被引：17
|
作者：
Hoshi, T
Kudo, M
机构：
[1] ULVAC PHI Inc, Chigasaki, Kanagawa 2530084, Japan
[2] Sekei Univ, Dept Appl Phys, Tokyo 180, Japan
来源：
APPLIED SURFACE SCIENCE | 2003年 / 203卷
关键词：
TOF-SIMS; bunched imaging; aberration free imaging;
D O I：
10.1016/S0169-4332(02)00834-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
TOF-SIMS (TOF: time of flight) imaging has been widely used in many laboratories for surface characterization purposes as well as an actual problem solving tool. In this paper, to optimize the quality of TOF-SIMS imaging, we investigated the instrumental variables, which include the ion beam pulse width, the ion beam current, the use of beam bunching, and the primary ion beam species. These experimental parameters will determine the special resolution, sensitivity, and mass resolution. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：818 / 824
页数：7
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