Interaction of O-2 with the Bi/Si(001) system: from passivation to promoted oxidation

被引：7
|
作者：
Koval, IF [1 ]
Melnik, PV [1 ]
Nakhodkin, NG [1 ]
Pyatnitsky, MY [1 ]
Afanasieva, TV [1 ]
机构：
[1] KIEV TARAS SHEVCHENKO UNIV,RADIOPHYS DEPT,UA-252017 KIEV,UKRAINE
来源：
SURFACE SCIENCE | 1997年 / 384卷 / 1-3期
关键词：
Auger electron spectroscopy; bismuth; electron energy loss spectroscopy; oxidation; silicon;
D O I：
10.1016/S0039-6028(97)00285-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Bismuth-covered Si(001) surface has been investigated by means of electron energy loss and Auger electron spectroscopy. The submonolayer coverage of Bi on Si(001) was found to reduce an initial sticking coefficient of molecular oxygen by two orders of magnitude in comparison with the clean Si(001) surface. whereas Bi-promoted formation of SiO2-like species was found at oxygen exposures > 10(5) L. (C) 1995 Elsevier Science B.V.
引用
收藏
页码：L844 / L847
页数：4
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