Interaction of O-2 with the Bi/Si(001) system: from passivation to promoted oxidation

被引：7
|
作者：
Koval, IF [1 ]
Melnik, PV [1 ]
Nakhodkin, NG [1 ]
Pyatnitsky, MY [1 ]
Afanasieva, TV [1 ]
机构：
[1] KIEV TARAS SHEVCHENKO UNIV,RADIOPHYS DEPT,UA-252017 KIEV,UKRAINE
来源：
SURFACE SCIENCE | 1997年 / 384卷 / 1-3期
关键词：
Auger electron spectroscopy; bismuth; electron energy loss spectroscopy; oxidation; silicon;
D O I：
10.1016/S0039-6028(97)00285-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Bismuth-covered Si(001) surface has been investigated by means of electron energy loss and Auger electron spectroscopy. The submonolayer coverage of Bi on Si(001) was found to reduce an initial sticking coefficient of molecular oxygen by two orders of magnitude in comparison with the clean Si(001) surface. whereas Bi-promoted formation of SiO2-like species was found at oxygen exposures > 10(5) L. (C) 1995 Elsevier Science B.V.
引用
收藏
页码：L844 / L847
页数：4
相关论文
共 50 条
  • [1] Si(001) surface passivation caused by Bi adsorption
    Koval, IF
    Melnik, PV
    Nakhodkin, MG
    Pyatnitsky, MYU
    Afanasieva, TV
    FRONTIERS IN NANOSCALE SCIENCE OF MICRON/SUBMICRON DEVICES, 1996, 328 : 105 - 108
  • [2] HREELS study of CO oxidation on Ag(001) by O-2 or O
    Burghaus, U
    Vattuone, L
    Gambardella, P
    Rocca, M
    SURFACE SCIENCE, 1997, 374 (1-3) : 1 - 8
  • [3] GROWTH OF EPITAXIAL SILICA ON VICINAL SI(001) SURFACES DURING THERMAL-OXIDATION IN O-2
    ROCHET, F
    FROMENT, M
    DANTERROCHES, C
    ROULET, H
    DUFOUR, G
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1989, 59 (03): : 339 - 363
  • [4] Promoted O-2 sticking on Li-covered Si(100)
    Ohkubo, T
    Muraoka, T
    Namiki, A
    SURFACE SCIENCE, 1996, 357 (1-3) : 684 - 689
  • [5] Isothermal desorption of O-2 from Ag(001)
    deMongeot, FB
    Rocca, M
    Valbusa, U
    SURFACE SCIENCE, 1997, 377 (1-3) : 691 - 695
  • [6] Oxidation of AlAs films under ultrahigh vacuum conditions: interaction of H2O and O-2 with the AlAs(001) surface
    Mitchell, WJ
    Chung, CH
    Yi, SI
    Hu, EL
    Weinberg, WH
    SURFACE SCIENCE, 1997, 384 (1-3) : 81 - 93
  • [7] Si(001) surface oxidation by N2O
    Hoffmann, P
    Mikalo, RP
    Schmeisser, D
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 303 (01) : 6 - 11
  • [8] DISSOCIATION OF O-2 ON CU(001)
    FISCHER, CR
    WHITTEN, JL
    PHYSICAL REVIEW B, 1989, 40 (08): : 5745 - 5749
  • [9] SURFACE-STRUCTURE AND OXIDATION OF SI(001)-BI
    HANADA, T
    KAWAI, M
    VACUUM, 1990, 41 (1-3) : 650 - 651
  • [10] THE INTERACTION OF CO, NO, AND O-2 WITH SODIUM-PROMOTED RH(100) SURFACES
    HOCHST, H
    COLAVITA, E
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1442 - 1445
12345