Fluorinated silica glass ablated with ArF excimer laser at low fluence

被引：3
|
作者：
Awazu, Koichi
机构：
[1] Univ Tokyo, Sch Engn, Dept Engn Synth, Bunkyo Ku, Tokyo 1138656, Japan
[2] Natl Inst Adv Ind Sci & Technol, CAN FOR, Tsukuba, Ibaraki 3058562, Japan
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2007年 / 353卷 / 02期
关键词：
laser-matter interactions; silica;
D O I：
10.1016/j.jnoncrysol.2006.11.002
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Amorphous SiO2 (a-SiO2) was formed by liquid-phase deposition (LPD) at room temperature. As a result of one shot of ArF excimer laser irradiation, LPD-formed a-SiO2 shows a threshold fluence for ablation of below than 200 mJ/cm(2), which is much lower than the threshold fluence (similar to 1 J/cm(2)) of a-SiO2 formed by thermal oxidation of silicon. Raman scattering spectroscopy revealed that two sharp lines at 495 cm(-1) and 606 cm(-1), respectively, labeled D-1 and D-2, had disappeared, and the main band at 430 cm(-1) was sharpened in LPD-formed a-SiO2. It is presumed that the fluorine broke the silica network, relaxing the Si-O-Si bond angle and dramatically reducing the threshold energy for ablation of a-SiO2. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：215 / 217
页数：3
相关论文
共 50 条
  • [31] The impact of O/Si ratio and hydrogen content on ArF excimer laser ablation of fused silica
    Tasche, D.
    Gerhard, C.
    Ihlemann, J.
    Wieneke, S.
    Vioel, W.
    JOURNAL OF THE EUROPEAN OPTICAL SOCIETY-RAPID PUBLICATIONS, 2014, 9
  • [32] EFFECT OF THE ARF EXCIMER LASER ON HUMAN ENAMEL
    FEUERSTEIN, O
    PALANKER, D
    FUXBRUNNER, A
    LEWIS, A
    DEUTSCH, D
    LASERS IN SURGERY AND MEDICINE, 1992, 12 (05) : 471 - 477
  • [33] ArF excimer laser irradiation of human dentin
    Sanchez, F
    Tost, AJE
    Morenza, JL
    LASERS IN SURGERY AND MEDICINE, 1997, 21 (05) : 474 - 479
  • [34] ARF EXCIMER LASER DOPING OF BORON INTO SILICON
    FOULON, F
    SLAOUI, A
    SIFFERT, P
    APPLIED SURFACE SCIENCE, 1989, 43 : 333 - 339
  • [35] ARF EXCIMER LASER DOPING OF BORON INTO SILICON
    KATO, S
    NAGAHORI, T
    MATSUMOTO, S
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3656 - 3659
  • [36] ArF excimer laser resists based on fluoroalcohol
    Ito, H
    Truong, HD
    Allen, RD
    Li, W
    Varanasi, PR
    Chen, KJ
    Khojasteh, M
    Huang, WS
    Burns, SD
    Pfeiffer, D
    POLYMERS FOR ADVANCED TECHNOLOGIES, 2006, 17 (02) : 104 - 115
  • [37] Development of Photoresists for ArF Excimer Laser Lithography
    Nozaki, Koji
    JOURNAL OF SYNTHETIC ORGANIC CHEMISTRY JAPAN, 2018, 76 (09) : 956 - 965
  • [38] ENHANCED PHOTOSENSITIVITY IN LIGHTLY DOPED STANDARD TELECOMMUNICATION FIBER EXPOSED TO HIGH FLUENCE ARF EXCIMER-LASER LIGHT
    MALO, B
    ALBERT, J
    HILL, KO
    BILODEAU, F
    JOHNSON, DC
    THERIAULT, S
    ELECTRONICS LETTERS, 1995, 31 (11) : 879 - 880
  • [39] ArF excimer laser for 193 nm lithography
    Stamm, U
    Patzel, R
    Kleinschmidt, J
    Vogler, K
    Zschocke, W
    Bragin, I
    Basting, D
    OPTICAL MICROLITHOGRAPHY XI, 1998, 3334 : 1010 - 1013
  • [40] ArF excimer laser for 193 nm lithography
    Stamm, U
    Kleinschmidt, J
    Heist, P
    Bragin, I
    Patzel, R
    Basting, D
    OPTICAL MICROLITHOGRAPHY X, 1997, 3051 : 868 - 873
12345