RESEARCH OF MICROWAVE-BANDWIDTH P-I-N PHOTODETECTORS

被引:1
|
作者
Belkin, Mikhail E. [1 ]
Dzichkovski, Nikolai A. [1 ]
机构
[1] Moscow State Tech Univ Radio Engn Elect & Automat, Moscow, Russia
关键词
Computer-aided design; p-i-n photodiode;
D O I
10.1109/EURCON.2009.5167626
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The methodology and results of the technology CAD followed by electronic CAD simulations for p-i-n photodiodes with microwave bandwidth are highlighted. Experimental verification results are also presented.
引用
收藏
页码:174 / 177
页数:4
相关论文
共 50 条
  • [21] Nitride-based p-i-n bandpass photodetectors
    Chiou, YZ
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (03) : 172 - 174
  • [22] A traveling-wave model for optimizing the bandwidth of p-i-n photodetectors in silicon-on-insulator technology
    Huynen, I
    Salamone, A
    Serres, M
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (06) : 953 - 963
  • [23] Velocity-matched distributed photodetectors and balanced photodetectors with p-i-n photodiodes
    Islam, MS
    Murthy, S
    Itoh, T
    Wu, MC
    Novak, D
    Waterhouse, RB
    Sivco, DL
    Cho, AY
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (10) : 1914 - 1920
  • [24] DEVELOPMENT AND PROPERTIES OF MICROWAVE P-I-N DIODES
    GISSING, JG
    RADIO AND ELECTRONIC ENGINEER, 1965, 29 (05): : 293 - &
  • [25] Microwave propagation in p-i-n transmission lines
    Zhu, Z
    VanderVorst, A
    IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1997, 7 (06): : 159 - 161
  • [26] GaN p-i-n photodetectors with an LT-GaN interlayer
    Lin, J. C.
    Su, Y. K.
    Chang, S. J.
    Lan, W. H.
    Huang, K. C.
    Chen, W. R.
    Lan, C. H.
    Huang, C. C.
    Lin, W. J.
    Cheng, Y. C.
    IET OPTOELECTRONICS, 2008, 2 (02) : 59 - 62
  • [27] EFFECT OF NEUTRON-IRRADIATION ON RESPONSIVITY OF P-I-N PHOTODETECTORS
    GEDAM, SG
    BANERJEE, PK
    MITRA, SS
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) : 4245 - 4247
  • [28] CHARACTERIZATION OF P-I-N DIODES AT MICROWAVE FREQUENCIES
    BAILEY, AG
    ROBSON, PN
    ELECTRONIC ENGINEERING, 1968, 40 (485): : 368 - &
  • [29] Temperature-Dependence of Ge on Si p-i-n Photodetectors
    Colace, Lorenzo
    Balbi, Michele
    Sorianello, Vito
    Assanto, Gaetano
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2008, 26 (13-16) : 2211 - 2214
  • [30] A model for the performance analysis and design of waveguide p-i-n photodetectors
    Das, NR
    Deen, MJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (04) : 465 - 472