Comparison of the charges generated by Fowler-Nordheim tunneling injection in different oxides of metal-oxide-semiconductor capacitors

Fowler-Nordheim tunneling injection was performed, from the gate, in P-type metal-oxide-semiconductor capacitors with HCl, wet or dry oxides and polysilicon gate. Trapped holes, as well as negative and anomalous positive charges were created. In this paper, we establish a classification of quality, based on the magnitude of the stress generated oxide charge density, for the three oxides. The HCl and wet oxides are better than the dry oxide. The dry oxide has larger oxide charges than the other oxides; the creation of the generated positive charge is not only due to hydrogen. (C) 1997 Elsevier Science B.V.